Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

文件：583.82 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ??2170 MHz

文件：275.87 Kbytes Page：11 Pages

Thermally-Enhanced High Power RF LDMOS FET

文件：826.16 Kbytes Page：9 Pages

Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 180 W, 28 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc\n ·Typical CW performance, 2170 MHz, 30 V - Output po;

封装/外壳：H-36260-2 包装：卷带（TR） 描述：FET RF 65V 2.14GHZ H-36260-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

文件：583.82 Kbytes Page：9 Pages

Thermally-Enhanced High Power RF LDMOS FET

文件：826.16 Kbytes Page：9 Pages

封装/外壳：2-扁平封装，叶片引线，带法兰 包装：带 描述：RF MOSFET LDMOS 28V H-36260-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

FET RF 65V 2.14GHZ H36260-2

FET RF LDMOS 4W SON10

Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ??2170 MHz

文件：275.87 Kbytes Page：11 Pages