Cellular (2000 MHz to 2200 MHz)

High Power RF LDMOS FET, 180 W, 28 V, 2110 – 2170 MHz ·Broadband internal matching\n ·Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc\n ·Typical CW performance, 2170 MHz, 30 V - Output po;

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF FET LDMOS H-36260-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：H-36260-2 包装：散装 描述：FET RF 65V 2.14GHZ H36260-2 分立半导体产品 晶体管 - FET，MOSFET - 射频