LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance

LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance

Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz

Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ??2025 MHz and 2110 ??2170 MHz

文件：263.08 Kbytes Page：10 Pages

封装/外壳：2-扁平封装，叶片引线 包装：托盘 描述：IC FET RF LDMOS 45W H-30265-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ??2025 MHz and 2110 ??2170 MHz

文件：263.08 Kbytes Page：10 Pages

封装/外壳：2-扁平封装，叶片引线，带法兰 包装：托盘 描述：IC FET RF LDMOS 45W H-31265-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ??2025 MHz and 2110 ??2170 MHz

文件：263.08 Kbytes Page：10 Pages