LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

LDMOSRF Power Field Effect Transistor 90 W, 869–960 MHz

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