NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB23005X is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 5W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

1-pole/2-pole 16A polarized power relays Variety of contact arrangements

FEATURES 1. Variety of contact arrangements Wide lineup of 1 Form C, 1 Form A, 1 Form B, 2 Form C, 2 Form A, 2 Form B, 1 Form A 1 Form B. 2. Latching operation Latching via a polarized magnetic circuit structure allows remote operation and lower energy consumption 3. Compact with high c

Suitable for lighting and motor load, 1 Form A 50A latching relays

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Contacts for signal loads and currents up to 5A

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