Contacts for signal loads and currents up to 5A

文件：775.18 Kbytes Page：4 Pages

NPN microwave power transistors

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI PTB23005X is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 5W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

Suitable for lighting and motor load, 1 Form A 50A latching relays

文件：224.17 Kbytes Page：6 Pages

Great variety of contact arrangements and materials to meet specific applications

文件：775.18 Kbytes Page：4 Pages