AC Motor Start Capacitors Non-polarized, Aluminum Electrolytic AC Motor Start Capacitors

Non-polarized, Aluminum Electrolytic AC Motor Start Capacitors The Type PSU is a compact non-polar, dual voltage rated, AC motor start capacitor constructed in a round rugged bakelite case. To extend the life of relay contact switches, the PSU can be purchased with optional bleeder resist

THAS231M150AA0C

文件：467.41 Kbytes Page：4 Pages

封装/外壳：径向，Can - QC 端子 包装：散装 描述：CAP ALUM 53UF 250V QC TERM 电容器 铝电解电容器

ALUMINUM ELECTROLYTIC CAPACITORS

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

3-Phase Bridge Rectifier

Description: The NTE5335 and NTE5338 3–Phase bridge rectifiers incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable performance. Available in an industry standard screw–mount package, these devices provide 2500Vrms from all terminals to the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan