isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 97A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction lo

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 97A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Appl

N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala

N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 60 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av

N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • Advanced TrenchMOS provides low RDSon and low gate charg

N-channel 100 V 8.5 m廓 standard level MOSFET in I2PAK

文件：735.4 Kbytes Page：14 Pages

N-channel 100 V 8.5 m廓 standard level MOSFET in I2PAK

文件：229.26 Kbytes Page：14 Pages

NextPower 100 V, 8.8 m廓 N-channel MOSFET in I2PAK

文件：255.94 Kbytes Page：13 Pages

PSMN8R5-100ESF - NextPower 100 V, 8.8 mΩ N-channel MOSFET in I2PAK package

N-channel 100 V 8.5 mΩ standard level MOSFET in TO220

N-channel 100 V 8.5 m廓 standard level MOSFET in TO220

文件：258.51 Kbytes Page：14 Pages

N-channel 100 V 8.5 m廓 standard level MOSFET in TO220

文件：258.51 Kbytes Page：14 Pages

PSMN8R5-100PSF - NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package

NextPower 100 V, 8.7 m廓 N-channel MOSFET in TO220package

文件：264.8 Kbytes Page：13 Pages

N-channel 100V 8.5 m廓 standard level MOSFET in TO220F(SOT186A)

文件：351.49 Kbytes Page：15 Pages

N-channel 108 V 8.5 m廓 standard level MOSFET in I2PAK

文件：355.18 Kbytes Page：15 Pages

N-channel LFPAK 60 V, 8 m廓 standard level MOSFET

N-channel LFPAK 60 V, 8 m廓 standard level MOSFET

文件：258.329 Kbytes Page：14 Pages

Technical Product Specification

文件：5.20604 Mbytes Page：246 Pages

Technical Product Specification

文件：5.20604 Mbytes Page：246 Pages

Standard is 600 volts maximum to ground

文件：206.03 Kbytes Page：1 Pages