N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 77A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Applica

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 77A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 40 V 7.6 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction lo

N-channel 8.3 m廓 30 V TrenchMOS logic level FET in LFPAK

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N-channel 8.3 m廓 30 V TrenchMOS logic level FET in LFPAK

文件：337.78 Kbytes Page：14 Pages

N-channel 30 V 7.9 m廓 logic level MOSFET in LFPAK using NextPower technology

N-channel 40 V 7.6 m廓 standard level MOSFET in D2PAK

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N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK

N-channel 40 V 7.6 m廓 standard level MOSFET in D2PAK

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N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

N-channel 40 V 7.6 mΩ standard level MOSFET

N-Channel 40 -V (D-S) MOSFET

文件：946.35 Kbytes Page：7 Pages

N-channel 40 V 7.6 m廓 standard level MOSFET

N-channel 80 V, 8 m廓 logic level MOSFET in LFPAK56

文件：738.08 Kbytes Page：12 Pages

SUPER BRIGHT T-1 3/4 (5 mm) LED LAMP - Water Clear

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SMD POWER INDUCTOR-RoHS

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SMD POWER INDUCTOR-RoHS

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Standard is 600 volts maximum to ground

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