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PSMN3R0价格
参考价格：￥1.8458
型号：PSMN3R0-30MLC,115 品牌：NXP 备注：这里有PSMN3R0多少钱，2025年最近7天走势，今日出价，今日竞价，PSMN3R0批发/采购报价，PSMN3R0行情走势销售排行榜，PSMN3R0报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel 30 V 3.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment 1.2 Features and benefits Low parasitic inductance and resistance Optimised for 4 | NEXPERIA 安世 |   | ||
N-channel 30 V 3 mΩ logic level MOSFET in LFPAK 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi | NEXPERIA 安世 | | ||
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction | NEXPERIA 安世 | | ||
N-channel 60 V 3.0 mΩ standard level MOSFET in I2PAK. 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction lo | NEXPERIA 安世 | | ||
N-channel 60 V 3.0 mΩ standard level MOSFET 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction | NEXPERIA 安世 | | ||
N-channel 30 V 3.15 m廓 logic level MOSFET in LFPAK33 using NextPower Technology | ETC 知名厂家 | ETC | | |
N-channel 30 V 3.15 m廓 logic level MOSFET in LFPAK33 using NextPower Technology 文件：375.69 Kbytes Page：14 Pages | Philips 飞利浦 | | ||
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel 30 V 3 mΩ logic level MOSFET in LFPAK | NEXPERIA 安世 | | ||
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel 30 V, 3.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology 文件：728.28 Kbytes Page：13 Pages | NEXPERIA 安世 | | ||
N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | NEXPERIA 安世 | | ||
包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
N-channel 30 V, 3.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology 文件：294.09 Kbytes Page：13 Pages | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor 文件：299.43 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel 60 V 3.2 m廓 standard level MOSFET in D2PAK | ETC 知名厂家 | ETC | | |
N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK | NEXPERIA 安世 | | ||
N-channel 60 V 3.0 m廓 standard level MOSFET in I2PAK. | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor 文件：299.96 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：305.94 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel 60 V 3.0 m廓 standard level MOSFET | ETC 知名厂家 | ETC | | |
Multilayer Ceramic Capacitors(High-Q Capacitors) 文件：233.51 Kbytes Page：6 Pages | Panasonic 松下 | | ||
High-Q Capacitors (Microwave Chip Capacitors) 文件：233.51 Kbytes Page：6 Pages | Panasonic 松下 | | ||
RC Series carbon composition 文件：288.94 Kbytes Page：4 Pages | OHMITE | | ||
Twelve wattage ratings 文件：331.13 Kbytes Page：4 Pages | OHMITE | | ||
RC Series carbon composition 文件：288.94 Kbytes Page：4 Pages | OHMITE | |
PSMN3R0产品属性
- 类型
描述
- 型号
PSMN3R0
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, N-CH, 30V, 70A, LFPAK33
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, N-CH, 30V, 70A, LFPAK33; Transistor
- Polarity
N Channel; Continuous Drain Current
- Id
70A; Drain Source Voltage
- Vds
30V; On Resistance
- Rds(on)
0.0027ohm; Rds(on) Test Voltage
- Vgs
10V; Threshold Voltage Vgs
- Typ
1.74V ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
26+ |
N/A |
60000 |
只有原装 可配单 |
|||
NEXPERIA/安世 |
2022+ |
50 |
6600 |
只做原装,假一罚十,长期供货。 |
|||
OMRON |
24+ |
只做原装 |
5850 |
进口原装假一赔百,现货热卖 |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
恩XP |
25+ |
TO220 |
200000 |
全新原装现货库存 |
|||
Nexperia |
25+ |
N/A |
20000 |
||||
恩XP |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
恩XP |
24+ |
TO-220 |
21574 |
郑重承诺只做原装进口现货 |
|||
恩XP |
2022+ |
TO220 |
16 |
原厂原装,假一罚十 |
|||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
PSMN3R0芯片相关品牌
PSMN3R0规格书下载地址
PSMN3R0参数引脚图相关
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2019-2-19
DdatasheetPDF页码索引
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