N-channel 30 V 3 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel 30 V 3 mΩ logic level MOSFET in LFPAK

N-channel TrenchMOS logic level FET

N-channel 30 V, 3.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：728.28 Kbytes Page：13 Pages

N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-channel 30 V, 3.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：294.09 Kbytes Page：13 Pages

N-channel 30 V 3.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment 1.2 Features and benefits  Low parasitic inductance and resistance  Optimised for 4

N-channel 30 V 3.15 m廓 logic level MOSFET in LFPAK33 using NextPower Technology