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PSMN2R2价格
参考价格:¥1.9708
型号:PSMN2R2-25YLC,115 品牌:NXP 备注:这里有PSMN2R2多少钱,2025年最近7天走势,今日出价,今日竞价,PSMN2R2批发/采购报价,PSMN2R2行情走势销售排行榜,PSMN2R2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low | NEXPERIA 安世 | |||
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | ETC 知名厂家 | ETC | ||
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | ETC 知名厂家 | ETC | ||
N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower technology 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Low | NEXPERIA 安世 | |||
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction | NEXPERIA 安世 | |||
N-channel 40 V 2.1 mΩ standard level MOSFET 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction loss | NEXPERIA 安世 | |||
N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180 | NEXPERIA 安世 | |||
N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180 | NEXPERIA 安世 | |||
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology | NEXPERIA 安世 | |||
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) 文件:1.8032 Mbytes Page:8 Pages | Philips 飞利浦 | |||
NextPower MOSFETs 文件:1.8032 Mbytes Page:8 Pages | Philips 飞利浦 | |||
N-channel 25 V 2.4 m廓 logic level MOSFET in LFPAK using NextPower technology | ETC 知名厂家 | ETC | ||
N-channel 30 V 2.15m廓 logic level MOSFET in LFPAK using NextPower technology | ETC 知名厂家 | ETC | ||
NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) 文件:1.8032 Mbytes Page:8 Pages | Philips 飞利浦 | |||
NextPower MOSFETs 文件:1.8032 Mbytes Page:8 Pages | Philips 飞利浦 | |||
N-channel 30 V 2.15 mΩ logic level MOSFET in LFPAK using NextPower technology | NEXPERIA 安世 | |||
N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK | NEXPERIA 安世 | |||
N-channel 40 V 2.2 m standard level MOSFET in D2PAK 文件:220.26 Kbytes Page:15 Pages | Philips 飞利浦 | |||
isc N-Channel MOSFET Transistor 文件:298.75 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-channel 40 V 2.2 m standard level MOSFET in D2PAK 文件:220.26 Kbytes Page:15 Pages | Philips 飞利浦 | |||
N-channel 40 V 2.1 m廓 standard level MOSFET | ETC 知名厂家 | ETC | ||
isc N-Channel MOSFET Transistor 文件:304.92 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N-channel 40 V 2.1 m廓 standard level MOSFET 文件:278.49 Kbytes Page:13 Pages | Philips 飞利浦 | |||
Discrete and MOSFET components, analog & logic ICs 文件:11.62183 Mbytes Page:234 Pages | NEXPERIA 安世 | |||
POWER INDUCTOR ●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc | AITSEMI 创瑞科技 | |||
WIRE WOUND SMD INDUCTOR ●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer | AITSEMI 创瑞科技 | |||
Automotive Relays TB RELAYS FEATURES * Compact and high-capacity 25 A load switching * Wide line-up * Pin in Paste compliant model added. TYPICAL APPLICATIONS Powered windows, Automatic door locks, Powered mirrors, Powered sunroof, Powered seats, Lift gates and Slide door closers, etc. | Panasonic 松下 | |||
Miniature PC Board, Twin Type, 1 Form C Automotive Relay FEATURES * Compact and high-capacity 25 A load switching * Pin in Paste compliant model added. TYPICAL APPLICATIONS Powered windows, Automatic door locks, Powered mirrors, Powered sunroof, Powered seats, Lift gates and Slide door closers, etc. | Panasonic 松下 | |||
LED LIGHT BAR & BAR GRAPH ARRAYS 文件:144.76 Kbytes Page:2 Pages | YSTONE 早安股份 |
PSMN2R2产品属性
- 类型
描述
- 型号
PSMN2R2
- 制造商
NXP Semiconductors
- 功能描述
MOSFET N CH 25V 100A LFPAK
- 制造商
NXP Semiconductors
- 功能描述
MOSFET, N CH, 25V, 100A, LFPAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
15000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
恩XP |
2016+ |
LFPAK |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
恩XP |
24+ |
SOT669 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
22+ |
LFPAK |
100000 |
代理渠道/只做原装/可含税 |
|||
恩XP |
24+ |
SMD |
50 |
NXP一级代理商原装进口现货,假一赔十 |
|||
恩XP |
24+ |
N/A |
6000 |
原厂原装,价格优势,欢迎洽谈! |
|||
Nexperia |
25+ |
N/A |
20000 |
||||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
恩XP |
26+ |
N/A |
60000 |
只有原装 可配单 |
|||
Nexperia(安世) |
24+ |
SOT-669 |
8850 |
支持大陆交货,美金交易。原装现货库存。 |
PSMN2R2芯片相关品牌
PSMN2R2规格书下载地址
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2019-2-19
DdatasheetPDF页码索引
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