N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180

Discrete and MOSFET components, analog & logic ICs

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N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 180

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

N-channel 40 V 2.1 mΩ standard level MOSFET

1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction loss

isc N-Channel MOSFET Transistor

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N-channel 40 V 2.2 m standard level MOSFET in D2PAK

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isc N-Channel MOSFET Transistor

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