N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. Features • Fully optimized Safe Operating Area (SOA) for superior linear mode ope

N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK

1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction loss

N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A and optimized for DC load switch and hot-swap applications. 2. Features and benefits • Optimized

N-channel 30 V 1.7 mΩ logic level MOSFET

1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losse

N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High reliability Power SO8 package, qualified to 150°C • Op

N-channel 30 V 1.9 m廓 logic level MOSFET in D2PAK

文件：219.07 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

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N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK

N-channel 30 V 1.9 m logic level MOSFET in D2PAK

文件：219.07 Kbytes Page：15 Pages

N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

Discrete and MOSFET components, analog & logic ICs

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N-channel 30 V 1.7 m廓 logic level MOSFET

isc N-Channel MOSFET Transistor

文件：306.06 Kbytes Page：2 Pages

N-channel 30 V 1.7 m廓 logic level MOSFET

PSMN1R6-30PL - N-channel 30 V 1.7 mΩ logic level MOSFET

N-channel 30 V 1.7 m廓 logic level MOSFET

N-channel 40 V 1.55 m廓 logic level MOSFET in LFPAK using NextPower technology

N-channel 40 V 1.55 m廓 logic level MOSFET in LFPAK using NextPower technology

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包装：管件 描述：MOSFET N-CH 60V DPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

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Multilayer Ceramic Capacitors(High-Q Capacitors)

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Power Inductors / Wire Wound type

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Power Inductors / Wire Wound type

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