1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.

NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 160 A

and optimized for DC load switch and hot-swap applications.

2. Features and benefits

• Optimized for low RDSon

• Low leakage < 1 μA at 25 °C

• Low spiking and ringing for low EMI designs

• Optimized for 4.5 V gate drive

• 160 A rated

• High reliability copper-clip bonded and solder die attach LFPAK33 package

• Qualified to 175 °C

• Exposed leads for optimal visual solder inspection

3. Applications

• DC switch / load switch

• USB-PD and fast-charge

• Battery protection

• OR-ing and hot-swap

• Synchronous rectifier in AC-DC and DC-DC applications

• Brushed and BLDC (brushless) motor control