N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

General description N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Opt

N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

N-channel 50 V, 1.18 mOhm, 280 A logic level MOSFET in LFPAK88 using NextPower-S3 Schottky-Plus technology

1. General description 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance industrial applications. 2. Features and benefits • 280 Amp c

NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 385 A ID(max) continuous current rating • Low QG ×

NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package

1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 385 Amps ID(max) continuous current rating • Low QG

N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology

NextPower MOSFETs

文件：1.8032 Mbytes Page：8 Pages

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes Page：8 Pages

N-channel 25 V 1.15 m廓 logic level MOSFET in LFPAK using

文件：393.5 Kbytes Page：15 Pages

N-channel 30 V 1.3 m廓 logic level MOSFET in I2PAK

文件：745.1 Kbytes Page：13 Pages

N-channel 30 V 1.3 m廓 logic level MOSFET in I2PAK

文件：257.6 Kbytes Page：13 Pages

N-channel 30 V 1.3 m廓 logic level MOSFET in TO-220

文件：750.28 Kbytes Page：14 Pages

N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220

N-channel 30 V 1.3 m廓 logic level MOSFET in TO-220

文件：276.36 Kbytes Page：14 Pages

N-channel 40 V 1.3 m廓 standard level MOSFET in D2PAK

文件：975.34 Kbytes Page：14 Pages

N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK

N-channel 40 V 1.3 m廓 standard level MOSFET in D2PAK

文件：228.31 Kbytes Page：14 Pages

Type 1R1-KL Miniature Sensor

Short Description • Aluminium bending miniature sensor • High accuracy • Suitable for kitchen scales

Automotive Relays TB RELAYS

FEATURES * Compact and high-capacity 25 A load switching * Wide line-up * Pin in Paste compliant model added. TYPICAL APPLICATIONS Powered windows, Automatic door locks, Powered mirrors, Powered sunroof, Powered seats, Lift gates and Slide door closers, etc.

SMD Shielded Power Inductor

Features: • Compact, low profile with low DCR and high current • Provides magnetic shielding against radiation • Flat bottom provides reliable surface mounting • Contact Stackpole for additional inductance values • 100% RoHS compliant and lead free without exemption • Halogen free • REA

Multilayer Ceramic Capacitors(High-Q Capacitors)

文件：233.51 Kbytes Page：6 Pages

High-Q Capacitors (Microwave Chip Capacitors)

文件：233.51 Kbytes Page：6 Pages