1. General description

280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance industrial applications.

2. Features and benefits

• 280 Amp continuous current capability

• LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability,

optimum soldering and easy solder-joint inspection

• Copper-clip and solder die attach for low package inductance and resistance, and high ID(max)

rating

• Ideal replacement for D2PAK and 10 x 12 mm leadless package types

• Qualified to 175 °C

• Avalanche rated, 100 tested

• Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

• Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for

low EMI designs

• Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

• Narrow VGS(th) rating for easy paralleling and improved current sharing

• Very strong linear-mode / safe operating area characteristics for safe and reliable switching at

high-current conditions

3. Applications

• Brushless DC motor control

• Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

• Battery protection and Battery Management Systems (BMS)

• Load switch

• 10 cell lithium-ion battery applications (36 V ‒ 42 V)