N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

N-channel TrenchMOS transistor

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PSMN130-200D - N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET

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1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

GAMMA SEALS

DESCRIPTION The BECA 130 profile is a gamma seal. Sealing happens when the axial force of the lip comes into contact with the housing. The metal part protects the rubber axial lip from external pollution. APPLICATIONS Axles Machine tools Electric motors Pumps Transmissions

Screw connection

The plug connector 130-A series was developed according to “White Goods Standard RAST 5 (Plug-Connection-Technology with a pitch of 5 mm). Due to its diverse coding possibilities, it offers maximum safety against incorrect plugging. For the coded version, a corresponding drawing or description

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY

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THREE PHASE BRIDGE

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