N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAXproducts use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

PSMN130-200D - N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS transistor

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N-channel TrenchMOS SiliconMAX standard level FET

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Positive Temperature Coefficient (PTC)

Description The 130V series provides radial resettable overcurrent protection with holding current from 0.1A to 1.35A. This series is suitable for applications with higher working voltage up to 130V. Features ■ Radial leaded devices. ■ Over-current protection ■ High voltage surge capabilitie

Positive Thermal Coefficent Diodes

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Radial Lead Resettable Polymer PTCs

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Resettable Fuse PTC 130V Series

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