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PSMN070-200价格
参考价格：￥8.2188
型号：PSMN070-200B,118 品牌：NXP 备注：这里有PSMN070-200多少钱，2025年最近7天走势，今日出价，今日竞价，PSMN070-200批发/采购报价，PSMN070-200行情走势销售排行榜，PSMN070-200报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel TrenchMOS transistor GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- | Philips 飞利浦 |   | ||
N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | ||
N-Channel 200 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial | VBSEMI 微碧半导体 | | ||
N-channel TrenchMOS transistor GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- | Philips 飞利浦 | | ||
N-channel TrenchMOS transistor 文件：142.28 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
N-channel TrenchMOS SiliconMAX standard level FET | NEXPERIA 安世 | | ||
N-channel TrenchMOS SiliconMAX standard level FET 文件：171.98 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
N-channel TrenchMOS transistor 文件：142.28 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
N-channel TrenchMOS SiliconMAX standard level FET | NEXPERIA 安世 | |
PSMN070-200产品属性
- 类型
描述
- 型号
PSMN070-200
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
N-channel TrenchMOS transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
54000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
恩XP |
2016+ |
TO-263 |
1800 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
原装 |
1923+ |
NA |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
|||
ADI |
23+ |
TO-263 |
8000 |
只做原装现货 |
|||
恩XP |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
25+ |
WQFN16 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
PHI |
24+ |
TO-263 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
PHI |
2023+ |
SOT404(D2PAK |
50000 |
原装现货 |
PSMN070-200芯片相关品牌
PSMN070-200规格书下载地址
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DdatasheetPDF页码索引
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