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PSMN070-200P价格

参考价格:¥8.8609

型号:PSMN070-200P,127 品牌:NXP 备注:这里有PSMN070-200P多少钱,2026年最近7天走势,今日出价,今日竞价,PSMN070-200P批发/采购报价,PSMN070-200P行情走势销售排行榜,PSMN070-200P报价。
型号 功能描述 生产厂家 企业 LOGO 操作
PSMN070-200P

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

PHILIPS

飞利浦

PSMN070-200P

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial

VBSEMI

微碧半导体

PSMN070-200P

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

NEXPERIA

安世

PSMN070-200P

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

NEXPERIA

安世

PSMN070-200P

N-channel TrenchMOS transistor

文件:142.28 Kbytes Page:12 Pages

PHILIPS

飞利浦

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

PHILIPS

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

NEXPERIA

安世

N-channel TrenchMOS transistor

文件:142.28 Kbytes Page:12 Pages

PHILIPS

飞利浦

PSMN070-200P产品属性

  • 类型

    描述

  • 型号

    PSMN070-200P

  • 功能描述

    MOSFET RAIL PWR-MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-2 8:50:00
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