N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

N-channel TrenchMOS transistor

GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:-

NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • Low QG × RDSon FOM for high efficiency switching applications •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 110V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction l

N-channel 60 V 14.8 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction l

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

N-channel TrenchMOS transistor

文件：146.19 Kbytes Page：9 Pages

N-channel TrenchMOS transistor

文件：146.19 Kbytes Page：9 Pages

N-channel TrenchMOS SiliconMAX standard level FET

N-Channel 100-V (D-S) MOSFET

文件：949.09 Kbytes Page：7 Pages

N-channel TrenchMOS SiliconMAX standard level FET

N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56

N-channel 100 V, 15 m廓 logic level MOSFET in LFPAK56

文件：726.68 Kbytes Page：13 Pages

NextPower 100 V, 14.7 mOhm N-channel MOSFET in LFPAK56 package

TrenchMOS Standard level FET

文件：91.56 Kbytes Page：12 Pages

N-channel TrenchMOS SiliconMAX standard level FET

N-channel 60 V 14.8 m standard level MOSFET in D2PAK

文件：207.54 Kbytes Page：13 Pages

N-channel 60 V 14.8 m廓 standard level MOSFET in D2PAK

文件：219.01 Kbytes Page：13 Pages

N-channel 60 V 14.8 m廓 standard level MOSFET

文件：197.1 Kbytes Page：14 Pages

N-channel 60 V 14.8 m廓 standard level MOSFET

N-channel 60 V 14.8 m廓 standard level MOSFET

文件：197.1 Kbytes Page：14 Pages

STATIC SEALS

DESCRIPTION The BECA 015 profile is a fluid connector seal for hydraulic systems, in line with standards DIN 3869, ISO 11926, ISO 9974 and ISO 1179. APPLICATIONS Agriculture Construction Machine tools Presses Hydraulic systems

EC Directives Models)

文件：373.43 Kbytes Page：51 Pages

Super Fast-Acting Fuse

文件：208.18 Kbytes Page：1 Pages

Fast-Acting Fuse

文件：140.65 Kbytes Page：1 Pages

Fast-Acting Fuse

文件：163.87 Kbytes Page：1 Pages