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PSMN015-100P价格
参考价格：￥5.7434
型号：PSMN015-100P,127 品牌：NXP 备注：这里有PSMN015-100P多少钱，2025年最近7天走势，今日出价，今日竞价，PSMN015-100P批发/采购报价，PSMN015-100P行情走势销售排行榜，PSMN015-100P报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PSMN015-100P | N-channel TrenchMOS transistor GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- | Philips 飞利浦 |   | |
PSMN015-100P | N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | |
PSMN015-100P | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PSMN015-100P | N-channel TrenchMOS SiliconMAX standard level FET | NEXPERIA 安世 | | |
PSMN015-100P | N-channel TrenchMOS transistor 文件：146.19 Kbytes Page：9 Pages | Philips 飞利浦 | | |
PSMN015-100P | N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | |
PSMN015-100P | N-Channel 100-V (D-S) MOSFET 文件：949.09 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
N-channel TrenchMOS SiliconMAX standard level FET 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b | NEXPERIA 安世 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS SiliconMAX standard level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS transistor GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- | Philips 飞利浦 | | ||
N-channel TrenchMOS transistor 文件：146.19 Kbytes Page：9 Pages | Philips 飞利浦 | |
PSMN015-100P产品属性
- 类型
描述
- 型号
PSMN015-100P
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
25+ |
TO-220 |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
恩XP |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
恩XP |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
恩XP |
24+ |
TO-220铁头 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
NEXPERIA |
21+ |
800 |
只做原装正品!现货库存!可开13点增值税票 |
||||
PHI |
05+ |
原厂原装 |
15051 |
只做全新原装真实现货供应 |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
恩XP |
25+23+ |
TO220 |
33372 |
绝对原装正品全新进口深圳现货 |
|||
恩XP |
24+ |
TO220 |
54000 |
郑重承诺只做原装进口现货 |
|||
恩XP |
17+ |
NA |
6200 |
100%原装正品现货 |
PSMN015-100P芯片相关品牌
PSMN015-100P规格书下载地址
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2019-2-19
DdatasheetPDF页码索引
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