PSMN004价格

参考价格:¥8.8421

型号:PSMN004-60B,118 品牌:NXP 备注:这里有PSMN004多少钱,2025年最近7天走势,今日出价,今日竞价,PSMN004批发/采购报价,PSMN004行情走势销售排行榜,PSMN004报价。
型号 功能描述 生产厂家 企业 LOGO 操作

N-channel logic level TrenchMOS transistor

VDSS = 25 V ID = 75 A RDS(ON) ≤ 4.3 mΩ (VGS = 10 V) RDS(ON) ≤ 5 mΩ (VGS = 5 V) GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters

Philips

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel logic level TrenchMOS transistor

VDSS = 25 V ID = 75 A RDS(ON) ≤ 4.3 mΩ (VGS = 10 V) RDS(ON) ≤ 5 mΩ (VGS = 5 V) GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters

Philips

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching Applications ■ DC to DC converters ■ Switch mode power supplies.

Philips

飞利浦

N-channel TrenchMOS SiliconMAX logic level FET

ETC

知名厂家

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 36V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 36V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching Applications ■ DC to DC converters ■ Switch mode power supplies.

Philips

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

Philips

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

ETC

知名厂家

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

NEXPERIA

安世

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency computer motherboard DC to DC converters ■ OR-ing applications.

Philips

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

ETC

知名厂家

N-channel logic level TrenchMOS transistor

文件:111.27 Kbytes Page:9 Pages

Philips

飞利浦

N-channel logic level TrenchMOS transistor

文件:111.27 Kbytes Page:9 Pages

Philips

飞利浦

Silicon MAX N-channel logic level TrenchMOS™ transistor

ETC

知名厂家

N-channel TrenchMOS SiliconMAX logic level FET

ETC

知名厂家

MOSFET N-CH 55V 100A SOT429

ETC

知名厂家

EC Directives Models)

文件:373.43 Kbytes Page:51 Pages

OMRON

欧姆龙

Fast-Acting Fuse

文件:140.65 Kbytes Page:1 Pages

CONQUER

功得电子

Fast-Acting Fuse

文件:163.87 Kbytes Page:1 Pages

CONQUER

功得电子

Embedded 3.5 SBC Chassis for MIO-5250, MIO-5251, MIO-5271

文件:1.25933 Mbytes Page:2 Pages

ADVANTECH

研华科技

Time-Lag Fuse

文件:225.62 Kbytes Page:1 Pages

CONQUER

功得电子

PSMN004产品属性

  • 类型

    描述

  • 型号

    PSMN004

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    N-channel logic level TrenchMOS transistor

更新时间:2025-12-25 9:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PH
23+
TO220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
恩XP
25+
TO-220
20300
NXP/恩智浦原装特价PSMN004-25P即刻询购立享优惠#长期有货
恩XP
24+
TO220
60000
全新原装现货
恩XP
25+
SOT404
188600
全新原厂原装正品现货 欢迎咨询
PHI
23+
TO220
7000
恩XP
原厂封装
9800
原装进口公司现货假一赔百
PHI
23+
TO-220
89630
当天发货全新原装现货
PH
2023+
TO220
8800
正品渠道现货 终端可提供BOM表配单。
恩XP
23+
TO-220
11846
一级代理商现货批发,原装正品,假一罚十
PHI
24+
NA/
330
优势代理渠道,原装正品,可全系列订货开增值税票

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