位置:首页 > IC中文资料第12481页 > PSDH175
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PSDH175 | Three Phase Half Controlled Bridges FEATURES ·Package with screw terminals ·Isolation voltage 3000 V~ ·Planar glasspassivated chips ·Low forward voltage drop ·UL registered.E 148688 APPLICATIONS ·Heat and temperature control for industrial furnaces and chemical processes ·Lighting control ·Motor control ·Power converte | ISC 无锡固电 | ||
PSDH175 | THREE PHASE BRIDGES - Standard Diodes - Baseline | POWERSEM | ||
PSDH175 | Three Phase Half Controlled Bridges 文件:187.38 Kbytes Page:3 Pages | POWERSEM | ||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state | MOTOROLA 摩托罗拉 | |||
N-CHANNEL MOS BROADBAND RF POWER FETs The RF MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state | MOTOROLA 摩托罗拉 | |||
N-CHANNEL BROADBAND RF POWER FETs Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance | MOTOROLA 摩托罗拉 | |||
Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea | NTE | |||
L-Band PA DRIVER AMPLIFIER DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: | NEC 瑞萨 |
PSDH175产品属性
- 类型
描述
- 型号
PSDH175
- 制造商
POWERSEM
- 制造商全称
POWERSEM
- 功能描述
Three Phase Half Controlled Bridges
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
26+ |
模块 |
3562 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
MICRO |
2402+ |
BGA |
8324 |
原装正品!实单价优! |
|||
MICRO |
BGA |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
POWERSEM |
24+ |
module |
6000 |
全新原装正品现货 假一赔佰 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
POWERSE |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
P&S |
24+ |
main |
2000 |
||||
Banner Engineering |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
POWERSEM |
23+ |
6000000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
26+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
PSDH175规格书下载地址
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DdatasheetPDF页码索引
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