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PSDH175

Three Phase Half Controlled Bridges

FEATURES ·Package with screw terminals ·Isolation voltage 3000 V~ ·Planar glasspassivated chips ·Low forward voltage drop ·UL registered.E 148688 APPLICATIONS ·Heat and temperature control for industrial furnaces and chemical processes ·Lighting control ·Motor control ·Power converte

ISC

无锡固电

PSDH175

THREE PHASE BRIDGES - Standard Diodes - Baseline

POWERSEM

PSDH175

Three Phase Half Controlled Bridges

文件:187.38 Kbytes Page:3 Pages

POWERSEM

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

MOTOROLA

摩托罗拉

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

NTE

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage:

NEC

瑞萨

PSDH175产品属性

  • 类型

    描述

  • 型号

    PSDH175

  • 制造商

    POWERSEM

  • 制造商全称

    POWERSEM

  • 功能描述

    Three Phase Half Controlled Bridges

更新时间:2026-5-16 18:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
26+
模块
3562
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
MICRO
2402+
BGA
8324
原装正品!实单价优!
MICRO
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
POWERSEM
24+
module
6000
全新原装正品现货 假一赔佰
三年内
1983
只做原装正品
POWERSE
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
P&S
24+
main
2000
Banner Engineering
25+
电联咨询
7800
公司现货,提供拆样技术支持
POWERSEM
23+
6000000
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择

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