型号 功能描述 生产厂家 企业 LOGO 操作
PSBDC60V3

Schottky Barrier Diode

PRISEMI

芯导科技

600V - 17A - IGBT Application: Inverter

Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 75 ns

RENESAS

瑞萨

更新时间:2025-10-15 18:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PRISEMI/芯导
25+
SMC
20300
PRISEMI/芯导原装特价PSBDC60V3即刻询购立享优惠#长期有货
芯导 PRISEMI
25+
SMD
880000
明嘉莱只做原装正品现货
PRISEMI/芯导
24+
SMC
900000
原装进口特价
PRISEMI/芯导
24+
SMC
60000
全新原装现货

PSBDC60V3数据表相关新闻