3...8 A Switching Regulators

Input voltage up to 144 VDC Single output of 5.1 to 48 VDC No input-to-output isolation Features • RoHS lead solder exemption compliant • Efficiency up to 96 • Low input-output differential voltage • No derating over temperature

3 to 8 A Switching Regulators

Input voltage up to 144 VDC Single output of 5.1 to 48 VDC No input-to-output isolation Features • RoHS lead solder exemption compliant • Efficiency up to 96 • Low input-output differential voltage • No derating over temperature

包装：散装 描述：DC/DC CONVERTER 12V 48W 电源 - 外部/内部（板外） 直流转换器

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Inp

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：367.31 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：128.61 Kbytes Page：3 Pages