6 AMP FAST RECOVERY RECTIFIER

FEATURES ● Rating to 1000V PRV ● Low cost ● Diffused junction ● Low forward voltage drop ● High current capability ● Easily cleaned with freon, alcohol, chlorothene and similar solvents ● UL recognition 94V-0 plastic material

FAST RECOVERY RECTIFIERS

REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 6.0 Amperes FEATURES ● Fast switching for high efficiency ● Low cost ● Diffused junction ● Low reverse leakage current ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0

FAST RECOVERY RECTIFIERS

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6.0A FAST RECOVERY DIODE

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6.0A GLASS PASSIVATED FAST RECOVERY DIODE

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Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and