PNP General Purpose Amplifier

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.

PNP switching transistor

DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PN2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

Si-Epitaxial Planar Switching Transistors

Si-Epitaxial Planar Switching Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS Complementary Silicon Transistors for Switching and Linear Applications.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier and high-speed, medium-power switching applications.

PNP Silicon Transistor

Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with PN2222

PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS Complementary Silicon Transistors for Switching and Linear Applications.

PNP General-Purpose Transistor

Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

PNP SILICON TRANSISTOR

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PNP OUTPUT TRANSISTOR

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PNP General Purpose Amplifier

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Trans GP BJT PNP 40V 0.8A 3-Pin TO-92

General Purpose Amplifier

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP Medium Power Transistor (Switching)

Features 1) BVCEO

PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

SMALL SIGNAL PNP TRANSISTOR

SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS PN2222A APPLICATIONS ■ WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW

PNP General Purpose Amplifier

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HPN2907A is designed for general purpose amplifier and high speed, medium-power switching applications. Features • Low Collector Saturation voltage • High Speed Switching • For Complementary Use with NPN Type HPN2222A

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

PNP General Purpose Amplifier

Features • Halogen free available upon request by adding suffix -HF • Through Hole Package • Capable of 600mWatts of Power Dissipation and 600mA Ic • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Marking: Part Number • Epoxy meets UL 94

PNP switching transistor

Si-Epitaxial Planar Switching Transistors

Si-Epitaxial Planar Switching Transistors • Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

PNP Silicon Transistor

Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with PN2222A

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Features •These are Pb-Free Devices*

PNP switching transistor

DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: PN2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

Small Signal Transistors

Small Signal Transistors TO-92 Case (Continued)

PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS Complementary Silicon Transistors for Switching and Linear Applications.

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

SMALL SIGNAL PNP TRANSISTOR

SMALL SIGNAL PNP TRANSISTOR ■ SILICON EPITAXIAL PLANAR PNP TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY ■ THE NPN COMPLEMENTARY TYPE IS PN2222A APPLICATIONS ■ WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Features •These are Pb-Free Devices*

PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Features •These are Pb-Free Devices*

PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

PNP GENERAL PURPOSE AMPLIFIER

DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

PNP General-Purpose Transistor

Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

PNP General Purpose Amplifier

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PNP General Purpose Amplifier

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PNP General Purpose Amplifier

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PNP GENERAL PURPOSE AMPLIFIER

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PNP General Purpose Amplifier

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