Dual N-channel mTrenchMOS™ extremely low level FET

1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Dual device n Fast switching n Low on-state resistance n Low threshold voltag

Dual N-channel TrenchMOS extremely low level FET

Dual N-channel mTrenchMOS extremely low level FET

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Dual N-Channel 20 V (D-S) MOSFET

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MOSFET N-CH TRENCH DL 20V

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

Silicon Complementary Transistors Audio Power Amplifier

Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage

Burst Mode Memory Controller

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