Power Transistors

Power Transistors TO-3 Case (Continued)

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION • High DC current gain • Collector-Emitter Breakdown Voltage - V(BR)CEO= 60V(Min) • Complement to type PMD1701K APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages