| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PMD10K | SILICON POWER DARLING TRANSISTORSl SILICON POWER DARLINGTON TRANSISTORS | CENTRAL |   | |
PMD10K | Silicon Power Darlington Transistors 文件：151.09 Kbytes Page：1 Pages | CENTRAL | | |
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVCEO(SUS)= 100V(Min) • Complement to type PMD11K100 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications | ISC 无锡固电 | | ||
SILICON POWER DARLING TRANSISTORSl SILICON POWER DARLINGTON TRANSISTORS | CENTRAL | | ||
Power Transistors Power Transistors TO-3 Case (Continued) | CENTRAL | | ||
Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVCEO(SUS)= 100V(Min) • Complement to type PMD11K100 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Power Transistors Power Transistors TO-3 Case (Continued) | CENTRAL | | ||
Power Transistors Power Transistors TO-3 Case (Continued) | CENTRAL | | ||
SILICON POWER DARLING TRANSISTORSl SILICON POWER DARLINGTON TRANSISTORS | CENTRAL | | ||
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage - VCEO(SUS)= 60V(Min) • Complement to type PMD11K60 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications | ISC 无锡固电 | | ||
Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage - VCEO(SUS)= 60V(Min) • Complement to type PMD11K60 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER DARLING TRANSISTORSl SILICON POWER DARLINGTON TRANSISTORS | CENTRAL | | ||
Power Transistors Power Transistors TO-3 Case (Continued) | CENTRAL | | ||
Silicon Power Darlington Transistors 文件：151.09 Kbytes Page：1 Pages | CENTRAL | | ||
Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | CENTRAL | | ||
Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | CENTRAL | | ||
Silicon Power Darlington Transistors 文件：151.09 Kbytes Page：1 Pages | CENTRAL | | ||
isc Silicon NPN Darlingtion Power Transistor 文件：215.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon Power Darlington Transistors 文件：151.09 Kbytes Page：1 Pages | CENTRAL | | ||
Silicon NPN Darlingtion Power Transistor 文件：74.63 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | CENTRAL | |
PMD10K产品属性
- 类型
描述
- Case：
TO-3
- Configuration/ Description：
NPN Darlington
- Polarity：
NPN
- IC MAX：
12A
- PD MAX：
150W
- VCEO MAX：
100V
- hFE MIN：
1000
- hFE MAX：
20000
- @VCE：
3V
- VCE(SAT) MAX：
2V
- @IC：
6A
- @IB：
24mA
- Cob MAX：
300pF
- fT MIN：
4MHz
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
3000 |
公司存货 |
|||||
CENTRAL |
26+ |
TO-3 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
ISC/固电 |
23+ |
TO-3 |
462000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SCC |
25+ |
7 |
公司优势库存 热卖中! |
PMD10K规格书下载地址
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