SILICON POWER DARLING TRANSISTORSl

SILICON POWER DARLINGTON TRANSISTORS

Power Transistors

Power Transistors TO-3 Case (Continued)

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage - VCEO(SUS)= 60V(Min) • Complement to type PMD11K60 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications

Silicon NPN Darlingtion Power Transistor

DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage - VCEO(SUS)= 60V(Min) • Complement to type PMD11K60 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Silicon Power Darlington Transistors

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Leaded Varistors

SIOV metal oxide varistors Leaded varistors, StandarD series Features ■ Wide operating voltage range 11 … 1100 VRMS ■ High surge current ratings up to 8 kA ■ No derating up to 85 °C ambient temperature ■ PSpice models

IGBT intelligent power module (IPM) 10 A, 600 V, DBC isolated SDIP-25L molded

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