60 V, 600 mA PNP switching transistor

1. General description PNP switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AM 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 60 V) • Leadless ultra small SMD plastic package

60 V, 600 mA PNP switching transistor

60 V, 600 mA PNP switching transistor

1. General description PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AMB 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 60V) • Leadless ultra small SMD plastic package

60 V, 600 mA PNP switching transistor

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PMBT2907AMB/SOT883/XQFN3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-101，SOT-883 包装：散装 描述：PMBT2907AM/SOT883/XQFN3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

808 MHz Center Frequency

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