PMBT2907A价格
参考价格：￥0.0538
型号：PMBT2907A,215 品牌：NXP 备注：这里有PMBT2907A多少钱，2026年最近7天走势，今日出价，今日竞价，PMBT2907A批发/采购报价，PMBT2907A行情走势销售排行榜，PMBT2907A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PMBT2907A | 丝印代码：-2F；PNP switching transistors DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: PMBT2222 and PMBT2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. | PHILIPS 飞利浦 |   | |
PMBT2907A | 丝印代码：2F；60V, 600 mA, PNP switching transistor 1. General description PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222A 40V variant: PMBT2907 2. Features and benefits • Single general-purpose switching transistor • AEC-Q101 qualified 3. Applications • Switching | NEXPERIA 安世 | | |
PMBT2907A | 丝印代码：-2F；PNP switching transistors | ETC 知名厂家 | ETC | |
PMBT2907A | 60V, 600 mA, PNP switching transistor PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PMBT2222A\n 40V variant: PMBT2907 • Single general-purpose switching transistor\n• AEC-Q101 qualified; | NEXPERIA 安世 | | |
丝印代码：M4；60 V, 600 mA PNP switching transistor 1. General description PNP switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AM 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 60 V) • Leadless ultra small SMD plastic package | NEXPERIA 安世 | | ||
丝印代码：0110；60 V, 600 mA PNP switching transistor 1. General description PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AMB 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 60V) • Leadless ultra small SMD plastic package | NEXPERIA 安世 | | ||
60 V, 600 mA PNP switching transistor PNP switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package.\n NPN complement: PMBT2222AMB • High current (max. 600 mA)\n• Low voltage (max. 60V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Power dissipation comparable to SOT23\n• AEC-Q101 qualified; | NEXPERIA 安世 | | ||
60 V, 600 mA, PNP switching transistor PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n NPN complement: PMBT2222A-Q • Single general-purpose switching transistor\n• Qualified according to AEC-Q101 and recommended for use in automotive applications; | NEXPERIA 安世 | | ||
丝印代码：X；60V, 600 mA PNP switching transistor 1. General description PNP switching transistor in an ultra small DFN1010D-3 (SOT1215) leadless Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PMBT2222AQA 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 60V) • Le | NEXPERIA 安世 | | ||
丝印代码：BH；60V, 600 mA, double PNP switching transistor General description Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double NPN complement: PMBT2222AYS Features and benefits • Double general-purpose switching transistor • AEC-Q101 qualified Applications • Switching and linear a | NEXPERIA 安世 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
包装：卷带（TR） 描述：TRANS PNP SWITCHING TO-236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
General Purpose Transistors General Purpose Transistors PNP Silicon | MOTOROLA 摩托罗拉 | | ||
General Purpose Transistors General Purpose Transistors PNP Silicon | MOTOROLA 摩托罗拉 | | ||
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |
PMBT2907A产品属性
- 类型
描述
- Package name：
SOT23
- Size (mm)：
2.9 x 1.3 x 1
- Polarity：
PNP
- Ptot (mW)：
250
- VCEO [max] (V)：
-60
- IC [max] (mA)：
-600
- hFE [min]：
75
- hFE [max]：
300
- Tj [max] (°C)：
150
- fT [min] (MHz)：
200
- Automotive qualified：
Y
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-883-3 |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
NEXPERIA/安世 |
25+ |
SOT363 |
600000 |
NEXPERIA/安世全新特价PMBT2907AYSX即刻询购立享优惠#长期有排单订 |
|||
恩XP |
24+/25+ |
42010 |
100%原装正品真实库存,支持实单 |
||||
恩XP |
23+ |
SOT-23 |
65400 |
||||
恩XP |
1611+ |
NA |
54000 |
||||
恩XP |
22+ |
3000 |
NXP代理分销,价格优势现货假一罚十 |
||||
恩XP |
25+ |
3000 |
全新原装!优势库存热卖中! |
||||
OTHER/其它 |
25+ |
NA |
7825 |
原装正品!清仓处理! |
|||
安世 |
25+ |
SOT23-3 |
16524 |
集电极 - 基极电压（VCBO）：最大为 60V。
集电极 - 发射极电压（VCEO）：最大为 40V。
发射极 - 基极电压（VEBO）：最大为 5V。
最大直流电集电极电流（IC）：为 600mA。
功率耗散（Pd）：250mW。
增益带宽产品（fT）：200MHz。
直流电流增益（hFE）：通常在 100 - 300 之间。
集电极 — 射极饱和电压（VCE (sat)）：典型值为 0.4V。
工作温度范围：-65℃至 + 150℃，能适应较宽的温度环境，可应用于一些对温度要求较为宽泛的场合。
特点：具有低电流、低电压特性，其 NPN 型互补晶体管为 PMBT2222A。
应用领域：主要用于开关和线性放大电路，可在各种电子设备中实现信号的开关控制或信号放大等功能。 |
|||
NEXPERIA/安世 |
24+ |
SOT |
30000 |
NEXPERIA/安世一级代理商 原装进口现货 |
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PMBT2907A数据表相关新闻
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2019-2-13
DdatasheetPDF页码索引
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