High efficiency step-down controller with embedded 2 A LDO regulator

Description The PM6675S device consists of a single high efficiency step-down controller and an independent Low Drop-Out (LDO) linear regulator. The Constant On-Time (COT) architecture assures fast transient response supporting both electrolytic and ceramic output capacitors. An embedded integra

封装/外壳：24-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG DL BCK/LNR 33KHZ 24VFQFPN 集成电路（IC） 线性稳压器控制器

封装/外壳：24-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG DL BCK/LNR 33KHZ 24VFQFPN 集成电路（IC） 稳压器 - 线性 + 开关

SILICON DIOXIDE PASSIVATED

• IN6677 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES , WITH THE EXCEPTION OF SOLDER REFLOW

0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

RF AMPLIFIER MODEL

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P-Channel Power Trench짰 MOSFET -30 V, -20 A, 14.4 m廓

文件：291.73 Kbytes Page：7 Pages