封装/外壳：非标准 包装：散装 描述：INDMOLDED POWDER5.7X5.5X5.0 MAX 电感器，线圈，扼流圈 固定电感器

封装/外壳：非标准 包装：散装 描述：INDMOLDED POWDER5.7X5.5X5.0 MAX 电感器，线圈，扼流圈 固定电感器

High Current Composite Inductor - PA5175XXXNLT and PM5175.XXXNLT, Up to 7.2Arms

High Current Composite Inductor - PA5175XXXNLT and PM5175.XXXNLT, Up to 7.2Arms

High Current Composite Inductor - PA5175XXXNLT and PM5175.XXXNLT, Up to 7.2Arms

Single, dual and triple output 1 to 10.5 Watt AC/DC encapsulated modules

文件：65.97 Kbytes Page：3 Pages

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.