20VN-ChannelEnhancementModeMOSFET–ESDProtected

Features ●RDS(ON),VGS@4.5V,ID@6.5A

20VN-ChannelEnhancementModeMOSFET–ESDProtected

Features ●RDS(ON),VGS@4.5V,ID@6.5A

SWITCH-MODETRANSFORMERGUIDE

CONSUMERPRODUCTS PulseoffersacompleterangeofSwitch-ModeTransformersinvarioustechnologies(slot,layerandtripleinsulationwire)usedforpowersuppliesintelevision,set-topboxes,satellitereceivers,DVDplayers,telephonechargers,andwhitegoods.Pulsealsooffersanewrangeo

CustomerSpecification

Construction AlphaWire|711LidgerwoodAvenue,Elizabeth,NJ07207 Tel:1-800-52ALPHA(25742),Web:www.alphawire.com Diameters(In) 1)Component14X1COND a)Conductor20(7/28)AWGTinnedCopper0.038 b)Insulation0.016Wall,Nom.FRPE0.070 (1)ColorCodeAlphaWireColorCode

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK2414isN-ChannelMOSFieldEffectTransistordesigned forhighvoltageswitchingapplications. FEATURES •LowOn-Resistance RDS(on)1=70mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=95mΩMAX.(VGS=4V,ID=5.0A) •LowCiss:Ci

Low-Cost,820nmMiniatureLinkFiberOpticComponentswithST,SMA,SC,andFCPorts

Features RoHScompliant Low-costtransmittersandreceivers ChoiceofST,SMA,SC,orFCports 820nmwavelengthtechnology Signalratesupto160MBaud Linkdistancesuptoseveralkilometers Compatiblewith50/125μm,62.5/125μm,100/140μm,and200μmPlastic-CladSilica(

CAPTIVEPANELSCREWS

文件：395.93 Kbytes Page：1 Pages