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N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance •Logiclevelcompatible Appl

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=69A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance •Logiclevelcompatible Appl

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

N-Channel30-V(D-S)MOSFET

文件:1.01868 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
更新时间:2025-6-5 22:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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