型号 功能描述 生产厂家 企业 LOGO 操作
PHX9NQ20T

N-channel TrenchMOS transistor

VDSS = 200 V ID = 5.2 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control

Philips

飞利浦

PHX9NQ20T

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

MOSFET N-CH 200V 5.2A TO220F

ETC

知名厂家

N-channel TrenchMOS transistor

VDSS = 200 V ID = 5.2 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control

Philips

飞利浦

N-channel TrenchMOS transistor

VDSS = 200 V ID = 8.7 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits a

Philips

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel TrenchMOS transistor

VDSS = 200 V ID = 8.7 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits a

Philips

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

NEXPERIA

安世

PHX9NQ20T产品属性

  • 类型

    描述

  • 型号

    PHX9NQ20T

  • 功能描述

    MOSFET RAIL PWR-MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-16 9:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
320
正品原装--自家现货-实单可谈
N
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
TI
2025+
TSSOP16
3785
全新原厂原装产品、公司现货销售
TI/德州仪器
24+
NA/
15
优势代理渠道,原装正品,可全系列订货开增值税票
恩XP
23+
TO2203 Isolated Tab
7000
PHYUNG
2223+
PHYUNG
26800
只做原装正品假一赔十为客户做到零风险
TEXASIN
18+
na
85600
保证进口原装可开17%增值税发票
国产
24+
0402
320000
全新原装数量均有多电话咨询
恩XP
22+
TO-220
90661
PHI
23+
TO-220
89630
当天发货全新原装现货

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