位置：首页 > IC中文资料第3186页 > PHX14NQ20T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHX14NQ20T | N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplie | Philips 飞利浦 |   | |
PHX14NQ20T | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID=7.6A@ TC=25℃ · Drain Source Voltage -VDSS=200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 230mΩ(Max)@VGS= 10V DESCRIPTION · DC to DC converters ·General purpose switching applications | ISC 无锡固电 | | |
MOSFET N-CH 200V 7.6A TO220F | ETC 知名厂家 | ETC | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
TrenchMOS transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching | Philips 飞利浦 | | ||
TrenchMOS standard level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching | Philips 飞利浦 | | ||
TrenchMOS standard level FET Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP14NQ20T in SOT78 (TO-220AB) PHB14NQ20T in SOT404 (D2-PAK) PHD14NQ20T in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast switching | Philips 飞利浦 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |
PHX14NQ20T产品属性
- 类型
描述
- 型号
PHX14NQ20T
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PHOENIX |
新 |
24 |
全新原装 货期两周 |
||||
PHI |
25+ |
TO-220F |
860000 |
明嘉莱只做原装正品现货 |
|||
PH |
24+ |
SOT186ATO-220F |
8866 |
||||
恩XP |
23+ |
SOT186ATO-220F |
6000 |
原装正品，支持实单 |
|||
恩XP |
23+ |
TO2203 Isolated Tab |
8000 |
只做原装现货 |
|||
恩XP |
23+ |
TO2203 Isolated Tab |
7000 |
||||
PHO |
2447 |
CONN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
恩XP |
22+ |
SOT186ATO-220F |
6000 |
十年配单,只做原装 |
|||
PHOENC |
23+ |
132000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
PHX14NQ20T规格书下载地址
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DdatasheetPDF页码索引
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