位置：首页 > IC中文资料第3186页 > PHX14NQ20T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PHX14NQ20T | N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticfullpackenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHX14NQ20Tissupplie | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   |
PHX14NQ20T | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=230mΩ(Max)@VGS=10V DESCRIPTION ·DCtoDCconverters ·Generalpurposeswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TrenchMOStransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
TrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
TrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
PHX14NQ20T产品属性
- 类型
描述
- 型号
PHX14NQ20T
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
25+ |
TO-220F |
860000 |
明嘉莱只做原装正品现货 |
|||
PH |
24+ |
SOT186ATO-220F |
8866 |
||||
恩XP |
22+ |
SOT186ATO-220F |
25000 |
只做原装进口现货,专注配单 |
|||
恩XP |
23+ |
TO2203 Isolated Tab |
7000 |
||||
PHO |
2447 |
CONN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
恩XP |
22+ |
SOT186ATO-220F |
6000 |
十年配单,只做原装 |
|||
PH |
23+ |
SOT186A |
21000 |
全新原装 |
|||
POWER |
2022+ |
TO-220 |
57550 |
||||
PHOENC |
23+ |
132000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
PHI |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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DdatasheetPDF页码索引
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