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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PHW45NQ10T | N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode po | Philips 飞利浦 |   | |
PHW45NQ10T | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode po | Philips 飞利浦 | | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode po | Philips 飞利浦 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
22+ |
TO-3P |
3000 |
原装正品,支持实单 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
PH |
24+ |
SOT429TO-247 |
8866 |
||||
恩XP |
2447 |
TO-247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
P |
22+ |
TO-247 |
25000 |
只做原装进口现货,专注配单 |
|||
MOTO |
9635+ |
SMD |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
P |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
|||
恩XP |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
PHI |
23+ |
TO-247 |
132000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
PHW45NQ10T规格书下载地址
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DdatasheetPDF页码索引
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