PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts. The PHU2N50E is compatible with self oscillating and IC driven circuits, including the UBA2021 ballast controller IC. Other applications inclu

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel 650V (D-S) Power MOSFET

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PowerMOS transistors Avalanche energy rated

2 Amps, 500 Volts N-CHANNEL POWER MOSFET

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2A, 500V N-CHANNEL POWER MOSFET

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N-CHANNEL JUNCTIN SILICON FET

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N-CHANNEL JUNCTIN SILICON FET

文件：208.82 Kbytes Page：7 Pages

N-CHANNEL JUNCTIN SILICON FET

文件：208.82 Kbytes Page：7 Pages