TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intende

TrenchMOS transistor Standard level FET

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plat

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plat

OptiMOS2 Power-Transistor

文件：280.51 Kbytes Page：9 Pages

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：542.47 Kbytes Page：12 Pages

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：542.47 Kbytes Page：12 Pages