TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHT6N03LT is supplied in the SOT223 surfa

TrenchMOS transistor Logic level FET

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plat

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plat

OptiMOS2 Power-Transistor

文件：280.51 Kbytes Page：9 Pages

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：542.47 Kbytes Page：12 Pages

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

文件：542.47 Kbytes Page：12 Pages