位置：首页 > IC中文资料第6311页 > PHT1N60T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance | ETCList of Unclassifed Manufacturers 未分类制造商 |  |   | |
SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi | Littelfuselittelfuse 力特力特公司 |  | | |
SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | | |
JEDECDO-7PACKAGE JEDECDO-7PACKAGE | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
PHT1N60T产品属性
- 类型
描述
- 型号
PHT1N60T
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 650MA I(D) | SOT-223
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Semitehelec |
2021+ |
LL34 |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NULL |
23+ |
TO-252 |
6000 |
专业优势供应 |
|||
UMW(广东友台半导体) |
24+ |
SOT-223 |
5000 |
诚信服务,绝对原装原盘。 |
|||
MORNSUN |
2017+ |
TO-251 |
6528 |
只做原装正品!假一赔十! |
|||
LL34 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
国产 |
19+ |
LL34 |
20000 |
||||
ROHM/罗姆 |
23+ |
LL34 |
15000 |
全新原装现货,价格优势 |
|||
UTC |
24+ |
SOT223 |
5000 |
原装 |
|||
BILIN |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
友顺 UTC |
23+ |
SOT-223 |
41330 |
原装正品，实单请联系 |
PHT1N60T芯片相关品牌
PHT1N60T规格书下载地址
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DdatasheetPDF页码索引
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