位置：首页 > IC中文资料第3186页 > PHT11N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHT11N06 | TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC | PHILIPS 飞利浦 |   | |
PHT11N06 | TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general | PHILIPS 飞利浦 | | |
PHT11N06 | TrenchMOS transistor Logic level FET | ETC 知名厂家 | ETC | |
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa | PHILIPS 飞利浦 | | ||
N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa | PHILIPS 飞利浦 | |
PHT11N06产品属性
- 类型
描述
- 型号
PHT11N06
- 功能描述
MOSFET TAPE13 PWRMOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
23+ |
TO233 |
20000 |
||||
PHI |
23+ |
SOT-223 |
89630 |
当天发货全新原装现货 |
|||
恩XP |
25+ |
SOT-223 |
860000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
24+ |
SOT-223 |
60100 |
郑重承诺只做原装进口现货 |
|||
恩XP |
24+ |
SOT-223 |
10562 |
||||
恩XP |
24+ |
SOT-223 |
5070 |
全新原装,价格优势,原厂原包 |
|||
恩XP |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
恩XP |
24+ |
SOT-223 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEXPERIA/安世 |
25+ |
SOT-223 |
38236 |
NEXPERIA/安世全新特价PHT11N06LT即刻询购立享优惠#长期有货 |
|||
SOT-223 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
PHT11N06芯片相关品牌
PHT11N06规格书下载地址
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DdatasheetPDF页码索引
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