型号 功能描述 生产厂家 企业 LOGO 操作
PHT11N06

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC

Philips

飞利浦

PHT11N06

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general

Philips

飞利浦

PHT11N06

TrenchMOS transistor Logic level FET

ETC

知名厂家

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general

Philips

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC

Philips

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

Philips

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

Philips

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

Philips

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

Philips

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

Philips

飞利浦

PHT11N06产品属性

  • 类型

    描述

  • 型号

    PHT11N06

  • 功能描述

    MOSFET TAPE13 PWRMOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-12-27 17:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
25+
SOT223
2987
只售原装自家现货!诚信经营!欢迎来电!
SOT-223
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEXPERIA/安世
25+
SOT-223
38236
NEXPERIA/安世全新特价PHT11N06LT即刻询购立享优惠#长期有货
NEXPERIA/安世
24+
SOT-223
7800
全新原厂原装正品现货,低价出售,实单可谈
恩XP
2450+
SOT223
6540
只做原装正品现货或订货!终端客户免费申请样品!
NEXPERIA/安世
2019+
SOT-223
78550
原厂渠道 可含税出货
恩XP
24+
SOT-223
60100
郑重承诺只做原装进口现货
24+
3000
公司存货
恩XP
09+
TO-223
9379
一级代理,专注军工、汽车、医疗、工业、新能源、电力
恩XP
23+
TO233
20000

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