TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

55 V, N-channel trenchMOS transistor logic level FET

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC