丝印代码：0406PAB；40 V, 6 A PNP high power bipolar transistor

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40 V, 6 A PNP high power bipolar transistor

丝印代码：0406PAB；40 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

40 V, 6 A PNP high power bipolar transistor

封装/外壳：SC-100，SOT-669 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 6A LFPAK56 PWRSO8 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：0406NAB；40 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

丝印代码：0406NAB；40 V, 6 A NPN high power bipolar transistor

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Safety GEAR

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