TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

TrenchMOS™ transistor Standard level FET

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

30V, 50A N-CHANNEL,FAST SWITCHING MOSFET

DESCRIPTION FEATURE The AM50N03 is available in PDFN8(3.3x3.3) FEATURE  Super Low Gate Charge  Excellent CdV/dt Effect Decline  Advanced High Cell Density Trench Technology APPLICATION  High frequency switching mode power supply

N-Channel 30-V (D-S) MOSFET

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50 Amps, 30 Volts N-CHANNEL MOSFET

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N-Channel 30-V (D-S) MOSFET

文件：1.01805 Mbytes Page：8 Pages